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Nature of low-frequency noise in homogeneous semiconductors

This report deals with a 1/f noise in homogeneous classical semiconductor samples on the base of silicon. We perform detail calculations of resistance fluctuations of the silicon sample due to both a) the charge carrier number changes due to their capture–emission processes, and b) due to screening...

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Detalles Bibliográficos
Autores principales: Palenskis, Vilius, Maknys, Kęstutis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4682134/
https://www.ncbi.nlm.nih.gov/pubmed/26674184
http://dx.doi.org/10.1038/srep18305

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