Controllable Growth of Large–Size Crystalline MoS(2) and Resist-Free Transfer Assisted with a Cu Thin Film

Two-dimensional MoS(2) is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS(2). In this work, we investigate the controllable growth of monolayer MoS(2) evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS(2), which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS(2) larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS(2) assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS(2) from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.