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Kelvin probe force microscopy for local characterisation of active nanoelectronic devices
Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably tra...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4685916/ https://www.ncbi.nlm.nih.gov/pubmed/26734511 http://dx.doi.org/10.3762/bjnano.6.225 |
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author | Wagner, Tino Beyer, Hannes Reissner, Patrick Mensch, Philipp Riel, Heike Gotsmann, Bernd Stemmer, Andreas |
author_facet | Wagner, Tino Beyer, Hannes Reissner, Patrick Mensch, Philipp Riel, Heike Gotsmann, Bernd Stemmer, Andreas |
author_sort | Wagner, Tino |
collection | PubMed |
description | Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably translates into lower lateral resolution and pronounced capacitive averaging of the locally measured contact potential difference. Furthermore, local changes in the strength of the electrostatic interaction between tip and surface easily lead to topography crosstalk seen in the surface potential. To take full advantage of the superior resolution of FM-KFM while maintaining robust topography feedback and minimal crosstalk, we introduce a novel FM-KFM controller based on a Kalman filter and direct demodulation of sidebands. We discuss the origin of sidebands in FM-KFM irrespective of the cantilever quality factor and how direct sideband demodulation enables robust amplitude modulated topography feedback. Finally, we demonstrate our single-scan FM-KFM technique on an active nanoelectronic device consisting of a 70 nm diameter InAs nanowire contacted by a pair of 120 nm thick electrodes. |
format | Online Article Text |
id | pubmed-4685916 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Beilstein-Institut |
record_format | MEDLINE/PubMed |
spelling | pubmed-46859162016-01-05 Kelvin probe force microscopy for local characterisation of active nanoelectronic devices Wagner, Tino Beyer, Hannes Reissner, Patrick Mensch, Philipp Riel, Heike Gotsmann, Bernd Stemmer, Andreas Beilstein J Nanotechnol Full Research Paper Frequency modulated Kelvin probe force microscopy (FM-KFM) is the method of choice for high resolution measurements of local surface potentials, yet on coarse topographic structures most researchers revert to amplitude modulated lift-mode techniques for better stability. This approach inevitably translates into lower lateral resolution and pronounced capacitive averaging of the locally measured contact potential difference. Furthermore, local changes in the strength of the electrostatic interaction between tip and surface easily lead to topography crosstalk seen in the surface potential. To take full advantage of the superior resolution of FM-KFM while maintaining robust topography feedback and minimal crosstalk, we introduce a novel FM-KFM controller based on a Kalman filter and direct demodulation of sidebands. We discuss the origin of sidebands in FM-KFM irrespective of the cantilever quality factor and how direct sideband demodulation enables robust amplitude modulated topography feedback. Finally, we demonstrate our single-scan FM-KFM technique on an active nanoelectronic device consisting of a 70 nm diameter InAs nanowire contacted by a pair of 120 nm thick electrodes. Beilstein-Institut 2015-11-23 /pmc/articles/PMC4685916/ /pubmed/26734511 http://dx.doi.org/10.3762/bjnano.6.225 Text en Copyright © 2015, Wagner et al. https://creativecommons.org/licenses/by/2.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms) |
spellingShingle | Full Research Paper Wagner, Tino Beyer, Hannes Reissner, Patrick Mensch, Philipp Riel, Heike Gotsmann, Bernd Stemmer, Andreas Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_full | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_fullStr | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_full_unstemmed | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_short | Kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
title_sort | kelvin probe force microscopy for local characterisation of active nanoelectronic devices |
topic | Full Research Paper |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4685916/ https://www.ncbi.nlm.nih.gov/pubmed/26734511 http://dx.doi.org/10.3762/bjnano.6.225 |
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