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Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth
Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements o...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4704057/ https://www.ncbi.nlm.nih.gov/pubmed/26739122 http://dx.doi.org/10.1038/srep18967 |