Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO(2) thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high I...

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Detalles Bibliográficos
Autores principales: Wei Shih, Chen, Chin, Albert, Fu Lu, Chun, Fang Su, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4705631/
https://www.ncbi.nlm.nih.gov/pubmed/26744240
http://dx.doi.org/10.1038/srep19023
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author Wei Shih, Chen
Chin, Albert
Fu Lu, Chun
Fang Su, Wei
author_facet Wei Shih, Chen
Chin, Albert
Fu Lu, Chun
Fang Su, Wei
author_sort Wei Shih, Chen
collection PubMed
description High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO(2) thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high I(ON)/I(OFF) of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low V(D) of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS(2) TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.
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spelling pubmed-47056312016-01-20 Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals Wei Shih, Chen Chin, Albert Fu Lu, Chun Fang Su, Wei Sci Rep Article High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO(2) thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high I(ON)/I(OFF) of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low V(D) of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS(2) TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals. Nature Publishing Group 2016-01-08 /pmc/articles/PMC4705631/ /pubmed/26744240 http://dx.doi.org/10.1038/srep19023 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Wei Shih, Chen
Chin, Albert
Fu Lu, Chun
Fang Su, Wei
Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
title Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
title_full Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
title_fullStr Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
title_full_unstemmed Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
title_short Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
title_sort remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4705631/
https://www.ncbi.nlm.nih.gov/pubmed/26744240
http://dx.doi.org/10.1038/srep19023
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