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Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO(2) thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high I...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4705631/ https://www.ncbi.nlm.nih.gov/pubmed/26744240 http://dx.doi.org/10.1038/srep19023 |