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Electrical and mechanical switching of ferroelectric polarization in the 70 nm BiFeO(3) film

Ferroelectric polarization switching and its domain evolution play a key role on the macroscopic electric properties of ferroelectric or piezoelectric devices. Mechanical switching has been reported recently in ~5 nm BaTiO(3) and PbZr(0.2)Ti(0.8)O(3) epitaxial films; however it is still a challenge...

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Detalles Bibliográficos
Autores principales: Chen, Liufang, Cheng, Zhihao, Xu, Wenting, Meng, Xiangjian, Yuan, Guoliang, Liu, Junming, Liu, Zhiguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4707501/
https://www.ncbi.nlm.nih.gov/pubmed/26752105
http://dx.doi.org/10.1038/srep19092
Descripción
Sumario:Ferroelectric polarization switching and its domain evolution play a key role on the macroscopic electric properties of ferroelectric or piezoelectric devices. Mechanical switching has been reported recently in ~5 nm BaTiO(3) and PbZr(0.2)Ti(0.8)O(3) epitaxial films; however it is still a challenge for a mechanical force to switch polarization of a slightly thicker film in the same way as an electric field. Here, we report that the polarization of a 70 nm BiFeO(3) epitaxial film can be completely switched by a mechanical force, and its domain evolution is similar to that observed with electrical switching. With the gradual increase of the field/force, new domains nucleate preferentially at domain boundaries, the μm-size domains commonly decompose to a mass of nm-size domains, and finally they may reorganize to μm-size domains which undergo 180(o) polarization switching through multi steps. Importantly, the complete mechanical switching of polarization was also established in the (0 0 1) film with a smooth surface. Furthermore, either upward or downward polarization can be read out nondestructively by a constant current. Our study sheds light on prospective applications of ferroelectrics in the absence of an electric field, such as memory devices and other micro-electromechanical systems.