ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell()

Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al(2)O(3), ZrO(2), Y(2)O(3), and La(2)O(3) thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark curre...

Descripción completa

Detalles Bibliográficos
Autores principales: Bethge, O., Nobile, M., Abermann, S., Glaser, M., Bertagnolli, E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier B.V 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4710496/
https://www.ncbi.nlm.nih.gov/pubmed/26877596
http://dx.doi.org/10.1016/j.solmat.2013.04.028
Descripción
Sumario:Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al(2)O(3), ZrO(2), Y(2)O(3), and La(2)O(3) thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current–density as low as 3×10(−7) A/cm(2), a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La(2)O(3). ZrO(2) and notably Al(2)O(3) show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.

Ejemplares similares