ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell()

Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al(2)O(3), ZrO(2), Y(2)O(3), and La(2)O(3) thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark curre...

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Autores principales: Bethge, O., Nobile, M., Abermann, S., Glaser, M., Bertagnolli, E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier B.V 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4710496/
https://www.ncbi.nlm.nih.gov/pubmed/26877596
http://dx.doi.org/10.1016/j.solmat.2013.04.028
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author Bethge, O.
Nobile, M.
Abermann, S.
Glaser, M.
Bertagnolli, E.
author_facet Bethge, O.
Nobile, M.
Abermann, S.
Glaser, M.
Bertagnolli, E.
author_sort Bethge, O.
collection PubMed
description Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al(2)O(3), ZrO(2), Y(2)O(3), and La(2)O(3) thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current–density as low as 3×10(−7) A/cm(2), a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La(2)O(3). ZrO(2) and notably Al(2)O(3) show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.
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spelling pubmed-47104962016-02-10 ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell() Bethge, O. Nobile, M. Abermann, S. Glaser, M. Bertagnolli, E. Sol Energy Mater Sol Cells Article Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al(2)O(3), ZrO(2), Y(2)O(3), and La(2)O(3) thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current–density as low as 3×10(−7) A/cm(2), a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La(2)O(3). ZrO(2) and notably Al(2)O(3) show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy. Elsevier B.V 2013-10 /pmc/articles/PMC4710496/ /pubmed/26877596 http://dx.doi.org/10.1016/j.solmat.2013.04.028 Text en © 2013 The Authors https://creativecommons.org/licenses/by-nc-nd/3.0/This is an open access article under the CC BY NC ND license (https://creativecommons.org/licenses/by-nc-nd/3.0/).
spellingShingle Article
Bethge, O.
Nobile, M.
Abermann, S.
Glaser, M.
Bertagnolli, E.
ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell()
title ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell()
title_full ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell()
title_fullStr ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell()
title_full_unstemmed ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell()
title_short ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell()
title_sort ald grown bilayer junction of zno:al and tunnel oxide barrier for sis solar cell()
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4710496/
https://www.ncbi.nlm.nih.gov/pubmed/26877596
http://dx.doi.org/10.1016/j.solmat.2013.04.028
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