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Single-crystalline ZnO sheet Source-Gated Transistors
Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorp...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4725757/ https://www.ncbi.nlm.nih.gov/pubmed/26757945 http://dx.doi.org/10.1038/srep19232 |
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author | Dahiya, A. S. Opoku, C. Sporea, R. A. Sarvankumar, B. Poulin-Vittrant, G. Cayrel, F. Camara, N. Alquier, D. |
author_facet | Dahiya, A. S. Opoku, C. Sporea, R. A. Sarvankumar, B. Poulin-Vittrant, G. Cayrel, F. Camara, N. Alquier, D. |
author_sort | Dahiya, A. S. |
collection | PubMed |
description | Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the present work demonstrate the assembly of SGTs based on single-crystalline ZnO sheet (ZS) with asymmetric ohmic drain and Schottky source contacts. Electrical transport studies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain current saturation (I(DS)(SAT)) at low drain voltages well below 2 V, even at very large gate voltages. The performance of a ZS based SGT is compared with a similar device with ohmic source contacts. The ZS SGT is found to exhibit much higher intrinsic gain, comparable on/off ratio and low off currents in the sub-picoamp range. This approach of device assembly may form the technological basis for highly efficient low-power analog and digital electronics using ZnO and/or other semiconducting nanomaterial. |
format | Online Article Text |
id | pubmed-4725757 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-47257572016-01-28 Single-crystalline ZnO sheet Source-Gated Transistors Dahiya, A. S. Opoku, C. Sporea, R. A. Sarvankumar, B. Poulin-Vittrant, G. Cayrel, F. Camara, N. Alquier, D. Sci Rep Article Due to their fabrication simplicity, fully compatible with low-cost large-area device assembly strategies, source-gated transistors (SGTs) have received significant research attention in the area of high-performance electronics over large area low-cost substrates. While usually based on either amorphous or polycrystalline silicon (α-Si and poly-Si, respectively) thin-film technologies, the present work demonstrate the assembly of SGTs based on single-crystalline ZnO sheet (ZS) with asymmetric ohmic drain and Schottky source contacts. Electrical transport studies of the fabricated devices show excellent field-effect transport behaviour with abrupt drain current saturation (I(DS)(SAT)) at low drain voltages well below 2 V, even at very large gate voltages. The performance of a ZS based SGT is compared with a similar device with ohmic source contacts. The ZS SGT is found to exhibit much higher intrinsic gain, comparable on/off ratio and low off currents in the sub-picoamp range. This approach of device assembly may form the technological basis for highly efficient low-power analog and digital electronics using ZnO and/or other semiconducting nanomaterial. Nature Publishing Group 2016-01-13 /pmc/articles/PMC4725757/ /pubmed/26757945 http://dx.doi.org/10.1038/srep19232 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Dahiya, A. S. Opoku, C. Sporea, R. A. Sarvankumar, B. Poulin-Vittrant, G. Cayrel, F. Camara, N. Alquier, D. Single-crystalline ZnO sheet Source-Gated Transistors |
title | Single-crystalline ZnO sheet Source-Gated Transistors |
title_full | Single-crystalline ZnO sheet Source-Gated Transistors |
title_fullStr | Single-crystalline ZnO sheet Source-Gated Transistors |
title_full_unstemmed | Single-crystalline ZnO sheet Source-Gated Transistors |
title_short | Single-crystalline ZnO sheet Source-Gated Transistors |
title_sort | single-crystalline zno sheet source-gated transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4725757/ https://www.ncbi.nlm.nih.gov/pubmed/26757945 http://dx.doi.org/10.1038/srep19232 |
work_keys_str_mv | AT dahiyaas singlecrystallineznosheetsourcegatedtransistors AT opokuc singlecrystallineznosheetsourcegatedtransistors AT sporeara singlecrystallineznosheetsourcegatedtransistors AT sarvankumarb singlecrystallineznosheetsourcegatedtransistors AT poulinvittrantg singlecrystallineznosheetsourcegatedtransistors AT cayrelf singlecrystallineznosheetsourcegatedtransistors AT camaran singlecrystallineznosheetsourcegatedtransistors AT alquierd singlecrystallineznosheetsourcegatedtransistors |