Cargando…
Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
GaInAsSb/GaSb based quantum well vertical cavity surface emitting lasers (VCSELs) operating in mid-infrared spectral range between 2 and 3 micrometres are of great importance for low cost gas monitoring applications. This paper discusses the efficiency and temperature sensitivity of the VCSELs emitt...
Autores principales: | Ikyo, A. B., Marko, I. P., Hild, K., Adams, A. R., Arafin, S., Amann, M.-C., Sweeney, S. J. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4726019/ https://www.ncbi.nlm.nih.gov/pubmed/26781492 http://dx.doi.org/10.1038/srep19595 |
Ejemplares similares
-
Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications
por: Lu, Qi, et al.
Publicado: (2019) -
Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
por: Li, Jiakai, et al.
Publicado: (2021) -
Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
por: Luo, Ning, et al.
Publicado: (2016) -
Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range
por: Rogowicz, E., et al.
Publicado: (2022) -
Optical Properties of GaSb Nanofibers
por: Zhou, Xiuli, et al.
Publicado: (2010)