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Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width
Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impur...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer International Publishing
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4728167/ https://www.ncbi.nlm.nih.gov/pubmed/26844027 http://dx.doi.org/10.1186/s40064-016-1715-6 |
| Sumario: | Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impurities, and holes, and including the 2D electron gas screening for all mentioned scattering mechanisms. Inelasticity of electron–phonon scattering is treated by means of a direct iterative solution of Boltzmann transport equation. Comparison with the experimental data at liquid helium temperature is provided. |
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