Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width

Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impur...

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Autores principales: Melezhik, E. O., Gumenjuk-Sichevska, J. V., Sizov, F. F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer International Publishing 2016
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4728167/
https://www.ncbi.nlm.nih.gov/pubmed/26844027
http://dx.doi.org/10.1186/s40064-016-1715-6
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author Melezhik, E. O.
Gumenjuk-Sichevska, J. V.
Sizov, F. F.
author_facet Melezhik, E. O.
Gumenjuk-Sichevska, J. V.
Sizov, F. F.
author_sort Melezhik, E. O.
collection PubMed
description Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impurities, and holes, and including the 2D electron gas screening for all mentioned scattering mechanisms. Inelasticity of electron–phonon scattering is treated by means of a direct iterative solution of Boltzmann transport equation. Comparison with the experimental data at liquid helium temperature is provided.
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spelling pubmed-47281672016-02-03 Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width Melezhik, E. O. Gumenjuk-Sichevska, J. V. Sizov, F. F. Springerplus Research Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impurities, and holes, and including the 2D electron gas screening for all mentioned scattering mechanisms. Inelasticity of electron–phonon scattering is treated by means of a direct iterative solution of Boltzmann transport equation. Comparison with the experimental data at liquid helium temperature is provided. Springer International Publishing 2016-01-26 /pmc/articles/PMC4728167/ /pubmed/26844027 http://dx.doi.org/10.1186/s40064-016-1715-6 Text en © Melezhik et al. 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Research
Melezhik, E. O.
Gumenjuk-Sichevska, J. V.
Sizov, F. F.
Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width
title Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width
title_full Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width
title_fullStr Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width
title_full_unstemmed Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width
title_short Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width
title_sort electron mobility in semi-metal hgcdte quantum wells: dependence on the well width
topic Research
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4728167/
https://www.ncbi.nlm.nih.gov/pubmed/26844027
http://dx.doi.org/10.1186/s40064-016-1715-6
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