Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

The effects of ex-situ annealing in a N(2) ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, id...

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Detalles Bibliográficos
Autores principales: Kasanaboina, Pavan, Sharma, Manish, Deshmukh, Prithviraj, Reynolds, C. Lewis, Liu, Yang, Iyer, Shanthi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735045/
https://www.ncbi.nlm.nih.gov/pubmed/26831685
http://dx.doi.org/10.1186/s11671-016-1265-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735045/
https://www.ncbi.nlm.nih.gov/pubmed/26831685
http://dx.doi.org/10.1186/s11671-016-1265-4

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