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Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

The effects of ex-situ annealing in a N(2) ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, id...

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Detalles Bibliográficos
Autores principales:	Kasanaboina, Pavan, Sharma, Manish, Deshmukh, Prithviraj, Reynolds, C. Lewis, Liu, Yang, Iyer, Shanthi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2016
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735045/ https://www.ncbi.nlm.nih.gov/pubmed/26831685 http://dx.doi.org/10.1186/s11671-016-1265-4

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