Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment

Bipolar switching resistance behaviors of the Gd:SiO(2) resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO(2)-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qua...

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Detalles Bibliográficos
Autores principales: Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735047/
https://www.ncbi.nlm.nih.gov/pubmed/26831690
http://dx.doi.org/10.1186/s11671-016-1272-5
Descripción
Sumario:Bipolar switching resistance behaviors of the Gd:SiO(2) resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO(2)-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO(2) RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO(2) RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.

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