Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment

Bipolar switching resistance behaviors of the Gd:SiO(2) resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO(2)-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qua...

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Autores principales: Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735047/
https://www.ncbi.nlm.nih.gov/pubmed/26831690
http://dx.doi.org/10.1186/s11671-016-1272-5
_version_ 1782413005651181568
author Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liang, Shu-Ping
Young, Tai-Fa
Syu, Yong-En
Sze, Simon M.
author_facet Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liang, Shu-Ping
Young, Tai-Fa
Syu, Yong-En
Sze, Simon M.
author_sort Chen, Kai-Huang
collection PubMed
description Bipolar switching resistance behaviors of the Gd:SiO(2) resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO(2)-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO(2) RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO(2) RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
format Online
Article
Text
id pubmed-4735047
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-47350472016-02-12 Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment Chen, Kai-Huang Chang, Kuan-Chang Chang, Ting-Chang Tsai, Tsung-Ming Liang, Shu-Ping Young, Tai-Fa Syu, Yong-En Sze, Simon M. Nanoscale Res Lett Nano Express Bipolar switching resistance behaviors of the Gd:SiO(2) resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO(2)-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO(2) RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO(2) RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices. Springer US 2016-02-01 /pmc/articles/PMC4735047/ /pubmed/26831690 http://dx.doi.org/10.1186/s11671-016-1272-5 Text en © Chen et al. 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liang, Shu-Ping
Young, Tai-Fa
Syu, Yong-En
Sze, Simon M.
Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment
title Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment
title_full Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment
title_fullStr Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment
title_full_unstemmed Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment
title_short Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment
title_sort improvement of bipolar switching properties of gd:sio(x) rram devices on indium tin oxide electrode by low-temperature supercritical co(2) treatment
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735047/
https://www.ncbi.nlm.nih.gov/pubmed/26831690
http://dx.doi.org/10.1186/s11671-016-1272-5
work_keys_str_mv AT chenkaihuang improvementofbipolarswitchingpropertiesofgdsioxrramdevicesonindiumtinoxideelectrodebylowtemperaturesupercriticalco2treatment
AT changkuanchang improvementofbipolarswitchingpropertiesofgdsioxrramdevicesonindiumtinoxideelectrodebylowtemperaturesupercriticalco2treatment
AT changtingchang improvementofbipolarswitchingpropertiesofgdsioxrramdevicesonindiumtinoxideelectrodebylowtemperaturesupercriticalco2treatment
AT tsaitsungming improvementofbipolarswitchingpropertiesofgdsioxrramdevicesonindiumtinoxideelectrodebylowtemperaturesupercriticalco2treatment
AT liangshuping improvementofbipolarswitchingpropertiesofgdsioxrramdevicesonindiumtinoxideelectrodebylowtemperaturesupercriticalco2treatment
AT youngtaifa improvementofbipolarswitchingpropertiesofgdsioxrramdevicesonindiumtinoxideelectrodebylowtemperaturesupercriticalco2treatment
AT syuyongen improvementofbipolarswitchingpropertiesofgdsioxrramdevicesonindiumtinoxideelectrodebylowtemperaturesupercriticalco2treatment
AT szesimonm improvementofbipolarswitchingpropertiesofgdsioxrramdevicesonindiumtinoxideelectrodebylowtemperaturesupercriticalco2treatment

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