Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor

The impact of a series resistor (R(S)) on the variability and endurance performance of memristor was studied in the TaO(x) memristive system. A dynamic voltage divider between the R(S) and memristor during both the set and the reset switching cycles can suppress the inherent irregularity of the volt...

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Autores principales: Kim, Kyung Min, Yang, J. Joshua, Strachan, John Paul, Grafals, Emmanuelle Merced, Ge, Ning, Melendez, Noraica Davila, Li, Zhiyong, Williams, R. Stanley
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735717/
https://www.ncbi.nlm.nih.gov/pubmed/26830763
http://dx.doi.org/10.1038/srep20085
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author Kim, Kyung Min
Yang, J. Joshua
Strachan, John Paul
Grafals, Emmanuelle Merced
Ge, Ning
Melendez, Noraica Davila
Li, Zhiyong
Williams, R. Stanley
author_facet Kim, Kyung Min
Yang, J. Joshua
Strachan, John Paul
Grafals, Emmanuelle Merced
Ge, Ning
Melendez, Noraica Davila
Li, Zhiyong
Williams, R. Stanley
author_sort Kim, Kyung Min
collection PubMed
description The impact of a series resistor (R(S)) on the variability and endurance performance of memristor was studied in the TaO(x) memristive system. A dynamic voltage divider between the R(S) and memristor during both the set and the reset switching cycles can suppress the inherent irregularity of the voltage dropped on the memristor, resulting in a greatly reduced switching variability. By selecting the proper resistance value of R(S) for the set and reset cycles respectively, we observed a dramatically improved endurance of the TaO(x) memristor. Such a voltage divider effect can thus be critical for the memristor applications that require low variability, high endurance and fast speed.
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spelling pubmed-47357172016-02-05 Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor Kim, Kyung Min Yang, J. Joshua Strachan, John Paul Grafals, Emmanuelle Merced Ge, Ning Melendez, Noraica Davila Li, Zhiyong Williams, R. Stanley Sci Rep Article The impact of a series resistor (R(S)) on the variability and endurance performance of memristor was studied in the TaO(x) memristive system. A dynamic voltage divider between the R(S) and memristor during both the set and the reset switching cycles can suppress the inherent irregularity of the voltage dropped on the memristor, resulting in a greatly reduced switching variability. By selecting the proper resistance value of R(S) for the set and reset cycles respectively, we observed a dramatically improved endurance of the TaO(x) memristor. Such a voltage divider effect can thus be critical for the memristor applications that require low variability, high endurance and fast speed. Nature Publishing Group 2016-02-02 /pmc/articles/PMC4735717/ /pubmed/26830763 http://dx.doi.org/10.1038/srep20085 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Kim, Kyung Min
Yang, J. Joshua
Strachan, John Paul
Grafals, Emmanuelle Merced
Ge, Ning
Melendez, Noraica Davila
Li, Zhiyong
Williams, R. Stanley
Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor
title Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor
title_full Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor
title_fullStr Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor
title_full_unstemmed Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor
title_short Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor
title_sort voltage divider effect for the improvement of variability and endurance of tao(x) memristor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4735717/
https://www.ncbi.nlm.nih.gov/pubmed/26830763
http://dx.doi.org/10.1038/srep20085
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