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Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to...

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Autores principales: Kim, Woo Young, Kim, Hyeon-Don, Kim, Teun-Teun, Park, Hyun-Sung, Lee, Kanghee, Choi, Hyun Joo, Lee, Seung Hoon, Son, Jaehyeon, Park, Namkyoo, Min, Bumki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737808/
https://www.ncbi.nlm.nih.gov/pubmed/26813710
http://dx.doi.org/10.1038/ncomms10429
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author Kim, Woo Young
Kim, Hyeon-Don
Kim, Teun-Teun
Park, Hyun-Sung
Lee, Kanghee
Choi, Hyun Joo
Lee, Seung Hoon
Son, Jaehyeon
Park, Namkyoo
Min, Bumki
author_facet Kim, Woo Young
Kim, Hyeon-Don
Kim, Teun-Teun
Park, Hyun-Sung
Lee, Kanghee
Choi, Hyun Joo
Lee, Seung Hoon
Son, Jaehyeon
Park, Namkyoo
Min, Bumki
author_sort Kim, Woo Young
collection PubMed
description Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.
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spelling pubmed-47378082016-03-04 Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations Kim, Woo Young Kim, Hyeon-Don Kim, Teun-Teun Park, Hyun-Sung Lee, Kanghee Choi, Hyun Joo Lee, Seung Hoon Son, Jaehyeon Park, Namkyoo Min, Bumki Nat Commun Article Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer. Nature Publishing Group 2016-01-27 /pmc/articles/PMC4737808/ /pubmed/26813710 http://dx.doi.org/10.1038/ncomms10429 Text en Copyright © 2016, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Kim, Woo Young
Kim, Hyeon-Don
Kim, Teun-Teun
Park, Hyun-Sung
Lee, Kanghee
Choi, Hyun Joo
Lee, Seung Hoon
Son, Jaehyeon
Park, Namkyoo
Min, Bumki
Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_full Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_fullStr Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_full_unstemmed Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_short Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
title_sort graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737808/
https://www.ncbi.nlm.nih.gov/pubmed/26813710
http://dx.doi.org/10.1038/ncomms10429
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