Cargando…
Direct growth of single-crystalline III–V semiconductors on amorphous substrates
The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint,...
Autores principales: | Chen, Kevin, Kapadia, Rehan, Harker, Audrey, Desai, Sujay, Seuk Kang, Jeong, Chuang, Steven, Tosun, Mahmut, Sutter-Fella, Carolin M., Tsang, Michael, Zeng, Yuping, Kiriya, Daisuke, Hazra, Jubin, Madhvapathy, Surabhi Rao, Hettick, Mark, Chen, Yu-Ze, Mastandrea, James, Amani, Matin, Cabrini, Stefano, Chueh, Yu-Lun, Ager III, Joel W., Chrzan, Daryl C., Javey, Ali |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4737854/ https://www.ncbi.nlm.nih.gov/pubmed/26813257 http://dx.doi.org/10.1038/ncomms10502 |
Ejemplares similares
-
A direct thin-film path towards low-cost large-area III-V photovoltaics
por: Kapadia, Rehan, et al.
Publicado: (2013) -
Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C
por: Hettick, Mark, et al.
Publicado: (2020) -
Strain-engineered growth of two-dimensional materials
por: Ahn, Geun Ho, et al.
Publicado: (2017) -
Synthetic WSe(2) monolayers with high photoluminescence quantum yield
por: Kim, Hyungjin, et al.
Publicado: (2019) -
Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors
por: Fahad, Hossain Mohammad, et al.
Publicado: (2017)