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Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-typ...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4743003/ https://www.ncbi.nlm.nih.gov/pubmed/26842997 http://dx.doi.org/10.1038/ncomms10632 |