X-ray Reciprocal Space Mapping of Graded Al(x)Ga(1 − x)N Films and Nanowires

The depth distribution of strain and composition in graded Al(x)Ga(1 − x)N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity d...

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Detalles Bibliográficos
Autores principales: Stanchu, Hryhorii V., Kuchuk, Andrian V., Kladko, Vasyl P., Ware, Morgan E., Mazur, Yuriy I., Zytkiewicz, Zbigniew R., Belyaev, Alexander E., Salamo, Gregory J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4747973/
https://www.ncbi.nlm.nih.gov/pubmed/26860714
http://dx.doi.org/10.1186/s11671-016-1299-7
Descripción
Sumario:The depth distribution of strain and composition in graded Al(x)Ga(1 − x)N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity distributions from graded Al(x)Ga(1 − x)N films and NWs. We attribute these differences to relaxation of the substrate-induced strain on the NWs free side walls. Finally, we demonstrate that the developed X-ray reciprocal space map model allows for reliable depth profiles of strain and Al composition determination in both Al(x)Ga(1 − x)N films and NWs.

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