Cargando…

X-ray Reciprocal Space Mapping of Graded Al(x)Ga(1 − x)N Films and Nanowires

The depth distribution of strain and composition in graded Al(x)Ga(1 − x)N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity d...

Descripción completa

Detalles Bibliográficos
Autores principales:	Stanchu, Hryhorii V., Kuchuk, Andrian V., Kladko, Vasyl P., Ware, Morgan E., Mazur, Yuriy I., Zytkiewicz, Zbigniew R., Belyaev, Alexander E., Salamo, Gregory J.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2016
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4747973/ https://www.ncbi.nlm.nih.gov/pubmed/26860714 http://dx.doi.org/10.1186/s11671-016-1299-7

Ejemplares similares

High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate
por: Stanchu, Hryhorii, et al.
Publicado: (2015)

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study
por: Kuchuk, Andrian V., et al.
Publicado: (2016)

Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
por: Kladko, Vasyl, et al.
Publicado: (2012)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
por: Wang, Zhiming M, et al.
Publicado: (2010)

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn(x)Al(1−x)O and Zn(x)Ga(1−x)O Seed Layers
por: Shkurmanov, Alexander, et al.
Publicado: (2017)

Lattice dynamics of Ga(1−x)Mn(x)N and Ga(1−x)Mn(x)As by first-principle calculations
por: Leite Alves, Horacio W, et al.
Publicado: (2012)

Electronic structures of GaAs/Al(x)Ga(1-x)As quantum double rings
por: Li, Shu-Shen, et al.
Publicado: (2006)

The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope
por: Zamani-Alavijeh, Mohammad, et al.
Publicado: (2022)

Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
por: Yuan, Qing, et al.
Publicado: (2018)

Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
por: Kondratenko, Serhiy V., et al.
Publicado: (2017)

Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift
por: Kuchuk, Andrian V., et al.
Publicado: (2021)

Si-rich Al(2)O(3) films grown by RF magnetron sputtering: structural and photoluminescence properties versus annealing treatment
por: Korsunska, Nadiia, et al.
Publicado: (2013)

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
por: Tsykaniuk, Bogdan I., et al.
Publicado: (2017)

Electrochemical performance of Ni(x)Co(1-x)MoO(4 )(0 ≤ x ≤ 1) nanowire anodes for lithium-ion batteries
por: Park, Kyung-Soo, et al.
Publicado: (2012)

The role of dislocation-induced scattering in electronic transport in Ga(x)In(1-x)N alloys
por: Donmez, Omer, et al.
Publicado: (2012)

Atomic-Resolution EDX, HAADF, and EELS Study of GaAs(1-x)Bi(x) Alloys
por: Paulauskas, Tadas, et al.
Publicado: (2020)

A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al(x)Ga(1−x)As quantum well structures
por: Donmez, Omer, et al.
Publicado: (2012)

Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures
por: Mazur, Yu I, et al.
Publicado: (2010)

Fabrication of Coaxial Si(1−x)Ge(x) Heterostructure Nanowires by O(2) Flow-Induced Bifurcate Reactions
por: Kim, Ilsoo, et al.
Publicado: (2010)

Facile synthesis of composition-tuned ZnO/Zn(x)Cd(1-x)Se nanowires for photovoltaic applications
por: Luo, Qiang, et al.
Publicado: (2015)

Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar In(x)Ga(1−x)N/GaN Multiple Quantum Wells
por: Chen, Cheng-Chang, et al.
Publicado: (2021)

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrO(x)-Based Structures
por: Khomenkova, L., et al.
Publicado: (2017)

Effect of Composition on Electrical and Optical Properties of Thin Films of Amorphous Ga(x)Se(100−x) Nanorods
por: Khan, Zishan H, et al.
Publicado: (2010)

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
por: Liu, Yao, et al.
Publicado: (2015)

The electronic and optical properties of quaternary GaAs(1-x-y )N( x )Bi( y ) alloy lattice-matched to GaAs: a first-principles study
por: Ma, Xiaoyang, et al.
Publicado: (2014)

Acceptor formation in Mg-doped, indium-rich Ga(x)In(1−x)N: evidence for p-type conductivity
por: Balkan, Naci, et al.
Publicado: (2012)

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
por: Wang, Ying, et al.
Publicado: (2017)

Enhancement of the electrochemical performance of the spinel structure LiNi(0.5-x)Ga(x)Mn(1.5)O(4) cathode material by Ga doping
por: Lan, Lifang, et al.
Publicado: (2018)

Fabrication and centeracterization of ordered CuIn((1−x))Ga(x)Se(2) nanopore films via template-based electrodeposition
por: Li, Ming, et al.
Publicado: (2012)

Spectroscopy of the Surface Polaritons in the Cd(X)Zn((1−X))P(2) Solid Solutions
por: Shportko, K. V., et al.
Publicado: (2017)

Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable As(x)Sb(1-x )interfaces
por: Li, Li-Gong, et al.
Publicado: (2012)

Red Light-Emitting Diode Based on Blue InGaN Chip with CdTe(x)S((1 − x)) Quantum Dots
por: Wang, Rongfang, et al.
Publicado: (2017)

Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga(1−x )In( x )N( y )As(1−y )/GaAs quantum well p-i-n photodiodes
por: Royall, Ben, et al.
Publicado: (2014)

Synthesis of Tin Nitride Sn(x)N(y)Nanowires by Chemical Vapour Deposition
por: Zervos, Matthew, et al.
Publicado: (2009)

A Comprehensive Study of One-Step Selenization Process for Cu(In(1−x)Ga(x))Se(2) Thin Film Solar Cells
por: Chen, Shih-Chen, et al.
Publicado: (2017)

Intersubband absorption properties of high Al content Al(x)Ga(1−x)N/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
por: Sun, He Hui, et al.
Publicado: (2012)

High Mg effective incorporation in Al-rich Al( x )Ga(1 - x )N by periodic repetition of ultimate V/III ratio conditions
por: Zheng, Tongchang, et al.
Publicado: (2014)

Magnetic In(x)Ga(1 - x)N nanowires at room temperature using Cu dopant and annealing
por: Park, Youn Ho, et al.
Publicado: (2015)

Synthesis and Properties of the La(1 − x − y)Eu(y)Ca(x)VO(4) (0 ≤ x, y ≤ 0.2) Compounds
por: Chukova, O. V., et al.
Publicado: (2017)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
por: Liang, BL, et al.
Publicado: (2007)

Cannot write session to /tmp/vufind_sessions/sess_7e5j0nmr4ii31jmc9af8g57ujl