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Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing

With its excellent mechanical flexibility, low-cost and low-temperature processing, the solution processed organic field-effect transistor (OFET) is a promising platform technology for developing ubiquitous sensor applications in digital health, environment monitoring and Internet of Things. However...

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Detalles Bibliográficos
Autores principales: Feng, Linrun, Tang, Wei, Zhao, Jiaqing, Yang, Ruozhang, Hu, Wei, Li, Qiaofeng, Wang, Ruolin, Guo, Xiaojun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748241/
https://www.ncbi.nlm.nih.gov/pubmed/26861412
http://dx.doi.org/10.1038/srep20671
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author Feng, Linrun
Tang, Wei
Zhao, Jiaqing
Yang, Ruozhang
Hu, Wei
Li, Qiaofeng
Wang, Ruolin
Guo, Xiaojun
author_facet Feng, Linrun
Tang, Wei
Zhao, Jiaqing
Yang, Ruozhang
Hu, Wei
Li, Qiaofeng
Wang, Ruolin
Guo, Xiaojun
author_sort Feng, Linrun
collection PubMed
description With its excellent mechanical flexibility, low-cost and low-temperature processing, the solution processed organic field-effect transistor (OFET) is a promising platform technology for developing ubiquitous sensor applications in digital health, environment monitoring and Internet of Things. However, a contradiction between achieving low voltage operation and having stable performance severely hinder the technology to become commercially viable. This work shows that, by reducing the sub-gap density of states (DOS) at the channel for low operation voltage and using a proper low-k non-polar polymer dielectric layer, such an issue can be addressed. Stable electrical properties after either being placed for weeks or continuously prolonged bias stressing for hours in ambient air are achieved for all solution processed unencapsulated OFETs with the channel being exposed to the ambient air for analyte detection. The fabricated device presents a steep subthreshold swing less than 100 mV/decade, and an ON/OFF ratio of 10(6) at a voltage swing of 3 V. The low voltage and stable operation allows the sensor made of the OFET to be incorporated into a battery-powered electronic system for continuously reliable sensing of ammonia vapor in ambient air with very small power consumption of about 50 nW.
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spelling pubmed-47482412016-02-17 Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing Feng, Linrun Tang, Wei Zhao, Jiaqing Yang, Ruozhang Hu, Wei Li, Qiaofeng Wang, Ruolin Guo, Xiaojun Sci Rep Article With its excellent mechanical flexibility, low-cost and low-temperature processing, the solution processed organic field-effect transistor (OFET) is a promising platform technology for developing ubiquitous sensor applications in digital health, environment monitoring and Internet of Things. However, a contradiction between achieving low voltage operation and having stable performance severely hinder the technology to become commercially viable. This work shows that, by reducing the sub-gap density of states (DOS) at the channel for low operation voltage and using a proper low-k non-polar polymer dielectric layer, such an issue can be addressed. Stable electrical properties after either being placed for weeks or continuously prolonged bias stressing for hours in ambient air are achieved for all solution processed unencapsulated OFETs with the channel being exposed to the ambient air for analyte detection. The fabricated device presents a steep subthreshold swing less than 100 mV/decade, and an ON/OFF ratio of 10(6) at a voltage swing of 3 V. The low voltage and stable operation allows the sensor made of the OFET to be incorporated into a battery-powered electronic system for continuously reliable sensing of ammonia vapor in ambient air with very small power consumption of about 50 nW. Nature Publishing Group 2016-02-10 /pmc/articles/PMC4748241/ /pubmed/26861412 http://dx.doi.org/10.1038/srep20671 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Feng, Linrun
Tang, Wei
Zhao, Jiaqing
Yang, Ruozhang
Hu, Wei
Li, Qiaofeng
Wang, Ruolin
Guo, Xiaojun
Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing
title Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing
title_full Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing
title_fullStr Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing
title_full_unstemmed Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing
title_short Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing
title_sort unencapsulated air-stable organic field effect transistor by all solution processes for low power vapor sensing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748241/
https://www.ncbi.nlm.nih.gov/pubmed/26861412
http://dx.doi.org/10.1038/srep20671
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