Thickness scaling of atomic-layer-deposited HfO(2) films and their application to wafer-scale graphene tunnelling transistors

The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO(2), is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we as...

Descripción completa

Detalles Bibliográficos
Autores principales: Jeong, Seong-Jun, Gu, Yeahyun, Heo, Jinseong, Yang, Jaehyun, Lee, Chang-Seok, Lee, Min-Hyun, Lee, Yunseong, Kim, Hyoungsub, Park, Seongjun, Hwang, Sungwoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748263/
https://www.ncbi.nlm.nih.gov/pubmed/26861833
http://dx.doi.org/10.1038/srep20907

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748263/
https://www.ncbi.nlm.nih.gov/pubmed/26861833
http://dx.doi.org/10.1038/srep20907

Ejemplares similares