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Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer
Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key pro...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4751437/ https://www.ncbi.nlm.nih.gov/pubmed/26869269 http://dx.doi.org/10.1038/srep20890 |
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author | Man, Michael K. L. Deckoff-Jones, Skylar Winchester, Andrew Shi, Guangsha Gupta, Gautam Mohite, Aditya D. Kar, Swastik Kioupakis, Emmanouil Talapatra, Saikat Dani, Keshav M. |
author_facet | Man, Michael K. L. Deckoff-Jones, Skylar Winchester, Andrew Shi, Guangsha Gupta, Gautam Mohite, Aditya D. Kar, Swastik Kioupakis, Emmanouil Talapatra, Saikat Dani, Keshav M. |
author_sort | Man, Michael K. L. |
collection | PubMed |
description | Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS(2)), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS(2) on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO(2) substrates. Our demonstration provides a way of integrating MoS(2) and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations. |
format | Online Article Text |
id | pubmed-4751437 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-47514372016-02-18 Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer Man, Michael K. L. Deckoff-Jones, Skylar Winchester, Andrew Shi, Guangsha Gupta, Gautam Mohite, Aditya D. Kar, Swastik Kioupakis, Emmanouil Talapatra, Saikat Dani, Keshav M. Sci Rep Article Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS(2)), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS(2) on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO(2) substrates. Our demonstration provides a way of integrating MoS(2) and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations. Nature Publishing Group 2016-02-12 /pmc/articles/PMC4751437/ /pubmed/26869269 http://dx.doi.org/10.1038/srep20890 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Man, Michael K. L. Deckoff-Jones, Skylar Winchester, Andrew Shi, Guangsha Gupta, Gautam Mohite, Aditya D. Kar, Swastik Kioupakis, Emmanouil Talapatra, Saikat Dani, Keshav M. Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer |
title | Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer |
title_full | Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer |
title_fullStr | Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer |
title_full_unstemmed | Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer |
title_short | Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer |
title_sort | protecting the properties of monolayer mos(2) on silicon based substrates with an atomically thin buffer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4751437/ https://www.ncbi.nlm.nih.gov/pubmed/26869269 http://dx.doi.org/10.1038/srep20890 |
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