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Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer

Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key pro...

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Autores principales: Man, Michael K. L., Deckoff-Jones, Skylar, Winchester, Andrew, Shi, Guangsha, Gupta, Gautam, Mohite, Aditya D., Kar, Swastik, Kioupakis, Emmanouil, Talapatra, Saikat, Dani, Keshav M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4751437/
https://www.ncbi.nlm.nih.gov/pubmed/26869269
http://dx.doi.org/10.1038/srep20890
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author Man, Michael K. L.
Deckoff-Jones, Skylar
Winchester, Andrew
Shi, Guangsha
Gupta, Gautam
Mohite, Aditya D.
Kar, Swastik
Kioupakis, Emmanouil
Talapatra, Saikat
Dani, Keshav M.
author_facet Man, Michael K. L.
Deckoff-Jones, Skylar
Winchester, Andrew
Shi, Guangsha
Gupta, Gautam
Mohite, Aditya D.
Kar, Swastik
Kioupakis, Emmanouil
Talapatra, Saikat
Dani, Keshav M.
author_sort Man, Michael K. L.
collection PubMed
description Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS(2)), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS(2) on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO(2) substrates. Our demonstration provides a way of integrating MoS(2) and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.
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spelling pubmed-47514372016-02-18 Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer Man, Michael K. L. Deckoff-Jones, Skylar Winchester, Andrew Shi, Guangsha Gupta, Gautam Mohite, Aditya D. Kar, Swastik Kioupakis, Emmanouil Talapatra, Saikat Dani, Keshav M. Sci Rep Article Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS(2)), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS(2) on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO(2) substrates. Our demonstration provides a way of integrating MoS(2) and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations. Nature Publishing Group 2016-02-12 /pmc/articles/PMC4751437/ /pubmed/26869269 http://dx.doi.org/10.1038/srep20890 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Man, Michael K. L.
Deckoff-Jones, Skylar
Winchester, Andrew
Shi, Guangsha
Gupta, Gautam
Mohite, Aditya D.
Kar, Swastik
Kioupakis, Emmanouil
Talapatra, Saikat
Dani, Keshav M.
Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer
title Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer
title_full Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer
title_fullStr Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer
title_full_unstemmed Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer
title_short Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer
title_sort protecting the properties of monolayer mos(2) on silicon based substrates with an atomically thin buffer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4751437/
https://www.ncbi.nlm.nih.gov/pubmed/26869269
http://dx.doi.org/10.1038/srep20890
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