Protecting the properties of monolayer MoS(2) on silicon based substrates with an atomically thin buffer

Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key pro...

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Detalles Bibliográficos
Autores principales: Man, Michael K. L., Deckoff-Jones, Skylar, Winchester, Andrew, Shi, Guangsha, Gupta, Gautam, Mohite, Aditya D., Kar, Swastik, Kioupakis, Emmanouil, Talapatra, Saikat, Dani, Keshav M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4751437/
https://www.ncbi.nlm.nih.gov/pubmed/26869269
http://dx.doi.org/10.1038/srep20890

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4751437/
https://www.ncbi.nlm.nih.gov/pubmed/26869269
http://dx.doi.org/10.1038/srep20890

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