Determination of critical diameters for intrinsic carrier diffusion-length of GaN nanorods with cryo-scanning near-field optical microscopy

Direct measurements of carrier diffusion in GaN nanorods with a designed InGaN/GaN layer-in-a-wire structure by scanning near-field optical microscopy (SNOM) were performed at liquid-helium temperatures of 10 K. Without an applied voltage, intrinsic diffusion lengths of photo-excited carriers were m...

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Detalles Bibliográficos
Autores principales: Chen, Y. T., Karlsson, K. F., Birch, J., Holtz, P. O.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4753442/
https://www.ncbi.nlm.nih.gov/pubmed/26876009
http://dx.doi.org/10.1038/srep21482

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4753442/
https://www.ncbi.nlm.nih.gov/pubmed/26876009
http://dx.doi.org/10.1038/srep21482

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