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Ab initio molecular dynamics simulation of the effects of stacking faults on the radiation response of 3C-SiC
In this study, an ab initio molecular dynamics method is employed to investigate how the existence of stacking faults (SFs) influences the response of SiC to low energy irradiation. It reveals that the C and Si atoms around the SFs are generally more difficult to be displaced than those in unfaulted...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754650/ https://www.ncbi.nlm.nih.gov/pubmed/26880027 http://dx.doi.org/10.1038/srep20669 |