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Ab initio molecular dynamics simulation of the effects of stacking faults on the radiation response of 3C-SiC

In this study, an ab initio molecular dynamics method is employed to investigate how the existence of stacking faults (SFs) influences the response of SiC to low energy irradiation. It reveals that the C and Si atoms around the SFs are generally more difficult to be displaced than those in unfaulted...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Jiang, M., Peng, S. M., Zhang, H. B., Xu, C. H., Xiao, H. Y., Zhao, F. A., Liu, Z. J., Zu, X. T.
Aineistotyyppi: Online Artikkeli Teksti
Kieli:English
Julkaistu: Nature Publishing Group 2016
Aiheet:
Linkit:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754650/
https://www.ncbi.nlm.nih.gov/pubmed/26880027
http://dx.doi.org/10.1038/srep20669