Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions

We report here the development of Pt and Pd-free perpendicular magnetic tunnel junctions (p-MTJ) for STT-MRAM applications. We start by studying a p-MTJ consisting of a bottom synthetic Co/Pt reference layer and a synthetic FeCoB/Ru/FeCoB storage layer covered with an MgO layer. We first investigate...

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Detalles Bibliográficos
Autores principales: Cuchet, Léa, Rodmacq, Bernard, Auffret, Stéphane, Sousa, Ricardo C., Prejbeanu, Ioan L., Dieny, Bernard
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4756698/
https://www.ncbi.nlm.nih.gov/pubmed/26883933
http://dx.doi.org/10.1038/srep21246

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4756698/
https://www.ncbi.nlm.nih.gov/pubmed/26883933
http://dx.doi.org/10.1038/srep21246

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