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Novel Vertical 3D Structure of TaO(x)-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation
A novel vertical 3D RRAM structure with greatly improved reliability behavior is proposed and experimentally demonstrated through basically compatible process featuring self-localized switching region by sidewall electrode oxidation. Compared with the conventional structure, due to the effective con...
Autores principales: | Yu, Muxi, Cai, Yimao, Wang, Zongwei, Fang, Yichen, Liu, Yefan, Yu, Zhizhen, Pan, Yue, Zhang, Zhenxing, Tan, Jing, Yang, Xue, Li, Ming, Huang, Ru |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4756706/ https://www.ncbi.nlm.nih.gov/pubmed/26884054 http://dx.doi.org/10.1038/srep21020 |
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