Athermal domain-wall creep near a ferroelectric quantum critical point

Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperatu...

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Detalles Bibliográficos
Autores principales: Kagawa, Fumitaka, Minami, Nao, Horiuchi, Sachio, Tokura, Yoshinori
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4757756/
https://www.ncbi.nlm.nih.gov/pubmed/26880041
http://dx.doi.org/10.1038/ncomms10675

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4757756/
https://www.ncbi.nlm.nih.gov/pubmed/26880041
http://dx.doi.org/10.1038/ncomms10675

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