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Athermal domain-wall creep near a ferroelectric quantum critical point
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperatu...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4757756/ https://www.ncbi.nlm.nih.gov/pubmed/26880041 http://dx.doi.org/10.1038/ncomms10675 |