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Deep-UV nitride-on-silicon microdisk lasers
Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4757875/ https://www.ncbi.nlm.nih.gov/pubmed/26887701 http://dx.doi.org/10.1038/srep21650 |
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author | Sellés, J. Brimont, C. Cassabois, G. Valvin, P. Guillet, T. Roland, I. Zeng, Y. Checoury, X. Boucaud, P. Mexis, M. Semond, F. Gayral, B. |
author_facet | Sellés, J. Brimont, C. Cassabois, G. Valvin, P. Guillet, T. Roland, I. Zeng, Y. Checoury, X. Boucaud, P. Mexis, M. Semond, F. Gayral, B. |
author_sort | Sellés, J. |
collection | PubMed |
description | Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10(−4). The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon. |
format | Online Article Text |
id | pubmed-4757875 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-47578752016-02-26 Deep-UV nitride-on-silicon microdisk lasers Sellés, J. Brimont, C. Cassabois, G. Valvin, P. Guillet, T. Roland, I. Zeng, Y. Checoury, X. Boucaud, P. Mexis, M. Semond, F. Gayral, B. Sci Rep Article Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor β = (4 ± 2) 10(−4). The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon. Nature Publishing Group 2016-02-18 /pmc/articles/PMC4757875/ /pubmed/26887701 http://dx.doi.org/10.1038/srep21650 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Sellés, J. Brimont, C. Cassabois, G. Valvin, P. Guillet, T. Roland, I. Zeng, Y. Checoury, X. Boucaud, P. Mexis, M. Semond, F. Gayral, B. Deep-UV nitride-on-silicon microdisk lasers |
title | Deep-UV nitride-on-silicon microdisk lasers |
title_full | Deep-UV nitride-on-silicon microdisk lasers |
title_fullStr | Deep-UV nitride-on-silicon microdisk lasers |
title_full_unstemmed | Deep-UV nitride-on-silicon microdisk lasers |
title_short | Deep-UV nitride-on-silicon microdisk lasers |
title_sort | deep-uv nitride-on-silicon microdisk lasers |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4757875/ https://www.ncbi.nlm.nih.gov/pubmed/26887701 http://dx.doi.org/10.1038/srep21650 |
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