Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer

Thin film electronics fabricated with non‐toxic and abundant materials are enabling for emerging bioelectronic technologies. Herein complementary‐like inverters comprising transistors using 6,6′‐dichloroindigo as the semiconductor and trimethylsilyl‐cellulose (TMSC) films on anodized aluminum as bil...

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Autores principales: Petritz, Andreas, Fian, Alexander, Głowacki, Eric D., Sariciftci, Niyazi Serdar, Stadlober, Barbara, Irimia‐Vladu, Mihai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: WILEY‐VCH Verlag Berlin GmbH 2015
Materias:
Rapid Research Letters
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4758611/
https://www.ncbi.nlm.nih.gov/pubmed/26937256
http://dx.doi.org/10.1002/pssr.201510139
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author Petritz, Andreas
Fian, Alexander
Głowacki, Eric D.
Sariciftci, Niyazi Serdar
Stadlober, Barbara
Irimia‐Vladu, Mihai
author_facet Petritz, Andreas
Fian, Alexander
Głowacki, Eric D.
Sariciftci, Niyazi Serdar
Stadlober, Barbara
Irimia‐Vladu, Mihai
author_sort Petritz, Andreas
collection PubMed
description Thin film electronics fabricated with non‐toxic and abundant materials are enabling for emerging bioelectronic technologies. Herein complementary‐like inverters comprising transistors using 6,6′‐dichloroindigo as the semiconductor and trimethylsilyl‐cellulose (TMSC) films on anodized aluminum as bilayer dielectric layer are demonstrated. The inverters operate both in the first and third quadrant, exhibiting a maximum static gain of 22 and a noise margin of 58% at a supply voltage of 14 V. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
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spelling pubmed-47586112016-02-29 Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer Petritz, Andreas Fian, Alexander Głowacki, Eric D. Sariciftci, Niyazi Serdar Stadlober, Barbara Irimia‐Vladu, Mihai Phys Status Solidi Rapid Res Lett Rapid Research Letters Thin film electronics fabricated with non‐toxic and abundant materials are enabling for emerging bioelectronic technologies. Herein complementary‐like inverters comprising transistors using 6,6′‐dichloroindigo as the semiconductor and trimethylsilyl‐cellulose (TMSC) films on anodized aluminum as bilayer dielectric layer are demonstrated. The inverters operate both in the first and third quadrant, exhibiting a maximum static gain of 22 and a noise margin of 58% at a supply voltage of 14 V. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) WILEY‐VCH Verlag Berlin GmbH 2015-06-11 2015-06 /pmc/articles/PMC4758611/ /pubmed/26937256 http://dx.doi.org/10.1002/pssr.201510139 Text en © 2015 The Authors. Phys. Status Solidi RRL published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the Creative Commons Attribution (http://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Rapid Research Letters
Petritz, Andreas
Fian, Alexander
Głowacki, Eric D.
Sariciftci, Niyazi Serdar
Stadlober, Barbara
Irimia‐Vladu, Mihai
Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
title Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
title_full Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
title_fullStr Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
title_full_unstemmed Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
title_short Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
title_sort ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
topic Rapid Research Letters
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4758611/
https://www.ncbi.nlm.nih.gov/pubmed/26937256
http://dx.doi.org/10.1002/pssr.201510139
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