Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated to the carrier profiling of this specific region with Scanning Probe Microscope, yet rel...

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Detalles Bibliográficos
Autores principales: Xia, Hui, Li, Tian-Xin, Tang, Heng-Jing, Zhu, Liang, Li, Xue, Gong, Hai-Mei, Lu, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4759585/
https://www.ncbi.nlm.nih.gov/pubmed/26892069
http://dx.doi.org/10.1038/srep21544

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4759585/
https://www.ncbi.nlm.nih.gov/pubmed/26892069
http://dx.doi.org/10.1038/srep21544

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