Cargando…
Lasing from Glassy Ge Quantum Dots in Crystalline Si
[Image: see text] Semiconductor light-emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices. Light sources based on group IV elements would be SIT-compatible, but suffer from the poor...
Autores principales: | Grydlik, Martyna, Hackl, Florian, Groiss, Heiko, Glaser, Martin, Halilovic, Alma, Fromherz, Thomas, Jantsch, Wolfgang, Schäffler, Friedrich, Brehm, Moritz |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2016
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4759615/ https://www.ncbi.nlm.nih.gov/pubmed/26937421 http://dx.doi.org/10.1021/acsphotonics.5b00671 |
Ejemplares similares
-
Laser Level Scheme of Self-Interstitials in Epitaxial
Ge Dots Encapsulated in Si
por: Grydlik, Martyna, et al.
Publicado: (2016) -
Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits
por: Grydlik, Martyna, et al.
Publicado: (2012) -
Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots
por: Schuster, Jeffrey, et al.
Publicado: (2021) -
Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
por: Brehm, M, et al.
Publicado: (2010) -
Enhanced Telecom Emission from Single Group-IV Quantum
Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities
por: Schatzl, Magdalena, et al.
Publicado: (2017)