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Plasma functionalization for cyclic transition between neutral and charged excitons in monolayer MoS(2)

Monolayer MoS(2) (1L-MoS(2)) has photoluminescence (PL) properties that can greatly vary via transition between neutral and charged exciton PLs depending on carrier density. Here, for the first time, we present a chemical doping method for reversible transition between neutral and charged excitons o...

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Detalles Bibliográficos
Autores principales: Kim, Y., Jhon, Y. I., Park, J., Kim, C., Lee, S., Jhon, Y. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4761959/
https://www.ncbi.nlm.nih.gov/pubmed/26898238
http://dx.doi.org/10.1038/srep21405
Descripción
Sumario:Monolayer MoS(2) (1L-MoS(2)) has photoluminescence (PL) properties that can greatly vary via transition between neutral and charged exciton PLs depending on carrier density. Here, for the first time, we present a chemical doping method for reversible transition between neutral and charged excitons of 1L-MoS(2) using chlorine-hydrogen-based plasma functionalization. The PL of 1L-MoS(2) is drastically increased by p-type chlorine plasma doping in which its intensity is easily tuned by controlling the plasma treatment duration. We find that despite their strong adhesion, a post hydrogen plasma treatment can very effectively dedope chlorine adatoms in a controllable way while maintaining robust structural integrity, which enables well-defined reversible PL control of 1L-MoS(2). After exhaustive chlorine dedoping, the hydrogen plasma process induces n-type doping of 1L-MoS(2), degrading the PL further, which can also be recovered by subsequent chlorine plasma treatment, extending the range of tunable PL into a bidirectional regime. This cyclically-tunable carrier doping method can be usefully employed in fabricating highly-tunable n- and p-type domains in monolayer transition-metal dichalcogenides suitable for two-dimensional electro-optic modulators, on-chip lasers, and spin- and valley-polarized light-emitting diodes.