Cargando…
Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell
In recent years, formidable effort has been devoted to exploring the potential of Resistive RAM (RRAM) devices to model key features of biological synapses. This is done to strengthen the link between neuro-computing architectures and neuroscience, bearing in mind the extremely low power consumption...
Autores principales: | Mehonic, Adnan, Kenyon, Anthony J. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Frontiers Media S.A.
2016
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4763078/ https://www.ncbi.nlm.nih.gov/pubmed/26941598 http://dx.doi.org/10.3389/fnins.2016.00057 |
Ejemplares similares
-
Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices
por: Zarudnyi, Konstantin, et al.
Publicado: (2018) -
Simulation of Inference Accuracy Using Realistic RRAM Devices
por: Mehonic, Adnan, et al.
Publicado: (2019) -
Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
por: Buckwell, Mark, et al.
Publicado: (2015) -
Memristor-Based Edge Detection for Spike Encoded Pixels
por: Mannion, Daniel J., et al.
Publicado: (2020) -
Graphene-based RRAM devices for neural computing
por: R, Rajalekshmi T., et al.
Publicado: (2023)