Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A signific...

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Autores principales: Jiang, Shengxiang, Feng, Yulong, Chen, Zhizhong, Zhang, Lisheng, Jiang, Xianzhe, Jiao, Qianqian, Li, Junze, Chen, Yifan, Li, Dongsan, Liu, Lijian, Yu, Tongjun, Shen, Bo, Zhang, Guoyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4763243/
https://www.ncbi.nlm.nih.gov/pubmed/26902178
http://dx.doi.org/10.1038/srep21573
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author Jiang, Shengxiang
Feng, Yulong
Chen, Zhizhong
Zhang, Lisheng
Jiang, Xianzhe
Jiao, Qianqian
Li, Junze
Chen, Yifan
Li, Dongsan
Liu, Lijian
Yu, Tongjun
Shen, Bo
Zhang, Guoyi
author_facet Jiang, Shengxiang
Feng, Yulong
Chen, Zhizhong
Zhang, Lisheng
Jiang, Xianzhe
Jiao, Qianqian
Li, Junze
Chen, Yifan
Li, Dongsan
Liu, Lijian
Yu, Tongjun
Shen, Bo
Zhang, Guoyi
author_sort Jiang, Shengxiang
collection PubMed
description An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device.
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spelling pubmed-47632432016-03-01 Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography Jiang, Shengxiang Feng, Yulong Chen, Zhizhong Zhang, Lisheng Jiang, Xianzhe Jiao, Qianqian Li, Junze Chen, Yifan Li, Dongsan Liu, Lijian Yu, Tongjun Shen, Bo Zhang, Guoyi Sci Rep Article An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device. Nature Publishing Group 2016-02-23 /pmc/articles/PMC4763243/ /pubmed/26902178 http://dx.doi.org/10.1038/srep21573 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Jiang, Shengxiang
Feng, Yulong
Chen, Zhizhong
Zhang, Lisheng
Jiang, Xianzhe
Jiao, Qianqian
Li, Junze
Chen, Yifan
Li, Dongsan
Liu, Lijian
Yu, Tongjun
Shen, Bo
Zhang, Guoyi
Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography
title Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography
title_full Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography
title_fullStr Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography
title_full_unstemmed Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography
title_short Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography
title_sort study on light extraction from gan-based green light-emitting diodes using anodic aluminum oxide pattern and nanoimprint lithography
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4763243/
https://www.ncbi.nlm.nih.gov/pubmed/26902178
http://dx.doi.org/10.1038/srep21573
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