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Dispersion-type Hall resistance in InSb|Pt hybrid systems
In nonmagnetic semiconductors and metals, most of Hall resistance exhibits a linear dependence with applied magnetic fields. In this work, by combining conduction in a metal and a semiconductor under external magnetic fields, we realize a dispersion-type magnetic-field dependence of Hall resistance....
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4764982/ https://www.ncbi.nlm.nih.gov/pubmed/26908361 http://dx.doi.org/10.1038/srep22085 |
| Sumario: | In nonmagnetic semiconductors and metals, most of Hall resistance exhibits a linear dependence with applied magnetic fields. In this work, by combining conduction in a metal and a semiconductor under external magnetic fields, we realize a dispersion-type magnetic-field dependence of Hall resistance. The dispersion-type Hall resistance appears in a broad temperature range below 150 K, where quantum linear magnetoresistance is noticeable in the semiconductor substrate. This unconventional Hall response in metal|semiconductor hybrid systems is explained by a change in dominant conduction from the semiconductor to the metal with increasing magnetic field strength. |
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