Dispersion-type Hall resistance in InSb|Pt hybrid systems

In nonmagnetic semiconductors and metals, most of Hall resistance exhibits a linear dependence with applied magnetic fields. In this work, by combining conduction in a metal and a semiconductor under external magnetic fields, we realize a dispersion-type magnetic-field dependence of Hall resistance....

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Detalles Bibliográficos
Autores principales: Shiomi, Y., Saitoh, E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4764982/
https://www.ncbi.nlm.nih.gov/pubmed/26908361
http://dx.doi.org/10.1038/srep22085
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author Shiomi, Y.
Saitoh, E.
author_facet Shiomi, Y.
Saitoh, E.
author_sort Shiomi, Y.
collection PubMed
description In nonmagnetic semiconductors and metals, most of Hall resistance exhibits a linear dependence with applied magnetic fields. In this work, by combining conduction in a metal and a semiconductor under external magnetic fields, we realize a dispersion-type magnetic-field dependence of Hall resistance. The dispersion-type Hall resistance appears in a broad temperature range below 150 K, where quantum linear magnetoresistance is noticeable in the semiconductor substrate. This unconventional Hall response in metal|semiconductor hybrid systems is explained by a change in dominant conduction from the semiconductor to the metal with increasing magnetic field strength.
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spelling pubmed-47649822016-03-02 Dispersion-type Hall resistance in InSb|Pt hybrid systems Shiomi, Y. Saitoh, E. Sci Rep Article In nonmagnetic semiconductors and metals, most of Hall resistance exhibits a linear dependence with applied magnetic fields. In this work, by combining conduction in a metal and a semiconductor under external magnetic fields, we realize a dispersion-type magnetic-field dependence of Hall resistance. The dispersion-type Hall resistance appears in a broad temperature range below 150 K, where quantum linear magnetoresistance is noticeable in the semiconductor substrate. This unconventional Hall response in metal|semiconductor hybrid systems is explained by a change in dominant conduction from the semiconductor to the metal with increasing magnetic field strength. Nature Publishing Group 2016-02-24 /pmc/articles/PMC4764982/ /pubmed/26908361 http://dx.doi.org/10.1038/srep22085 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Shiomi, Y.
Saitoh, E.
Dispersion-type Hall resistance in InSb|Pt hybrid systems
title Dispersion-type Hall resistance in InSb|Pt hybrid systems
title_full Dispersion-type Hall resistance in InSb|Pt hybrid systems
title_fullStr Dispersion-type Hall resistance in InSb|Pt hybrid systems
title_full_unstemmed Dispersion-type Hall resistance in InSb|Pt hybrid systems
title_short Dispersion-type Hall resistance in InSb|Pt hybrid systems
title_sort dispersion-type hall resistance in insb|pt hybrid systems
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4764982/
https://www.ncbi.nlm.nih.gov/pubmed/26908361
http://dx.doi.org/10.1038/srep22085
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