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Insulating phase at low temperature in ultrathin La(0.8)Sr(0.2)MnO(3) films

Metal-insulator transition is observed in the La(0.8)Sr(0.2)MnO(3) thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells and it is found that the Mott variable range hopping...

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Autores principales: Feng, Yaqing, Jin, Kui-juan, Gu, Lin, He, Xu, Ge, Chen, Zhang, Qing-hua, He, Min, Guo, Qin-lin, Wan, Qian, He, Meng, Lu, Hui-bin, Yang, Guozhen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4772131/
https://www.ncbi.nlm.nih.gov/pubmed/26928070
http://dx.doi.org/10.1038/srep22382
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author Feng, Yaqing
Jin, Kui-juan
Gu, Lin
He, Xu
Ge, Chen
Zhang, Qing-hua
He, Min
Guo, Qin-lin
Wan, Qian
He, Meng
Lu, Hui-bin
Yang, Guozhen
author_facet Feng, Yaqing
Jin, Kui-juan
Gu, Lin
He, Xu
Ge, Chen
Zhang, Qing-hua
He, Min
Guo, Qin-lin
Wan, Qian
He, Meng
Lu, Hui-bin
Yang, Guozhen
author_sort Feng, Yaqing
collection PubMed
description Metal-insulator transition is observed in the La(0.8)Sr(0.2)MnO(3) thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells and it is found that the Mott variable range hopping conduction dominates in this insulating phase at low temperature with a decrease of localization length in thinner films. A deficiency of oxygen content and a resulting decrease of the Mn valence have been observed in the ultrathin films with thickness smaller than or equal to 10 unit cells by studying the aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy of the films. These results suggest that the existence of the oxygen vacancies in thinner films suppresses the double-exchange mechanism and contributes to the enhancement of disorder, leading to a decrease of the Curie temperature and the low temperature insulating phase in the ultrathin films. In addition, the suppression of the magnetic properties in thinner films indicates stronger disorder of magnetic moments, which is considered to be the reason for this decrease of the localization length.
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spelling pubmed-47721312016-03-07 Insulating phase at low temperature in ultrathin La(0.8)Sr(0.2)MnO(3) films Feng, Yaqing Jin, Kui-juan Gu, Lin He, Xu Ge, Chen Zhang, Qing-hua He, Min Guo, Qin-lin Wan, Qian He, Meng Lu, Hui-bin Yang, Guozhen Sci Rep Article Metal-insulator transition is observed in the La(0.8)Sr(0.2)MnO(3) thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells and it is found that the Mott variable range hopping conduction dominates in this insulating phase at low temperature with a decrease of localization length in thinner films. A deficiency of oxygen content and a resulting decrease of the Mn valence have been observed in the ultrathin films with thickness smaller than or equal to 10 unit cells by studying the aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy of the films. These results suggest that the existence of the oxygen vacancies in thinner films suppresses the double-exchange mechanism and contributes to the enhancement of disorder, leading to a decrease of the Curie temperature and the low temperature insulating phase in the ultrathin films. In addition, the suppression of the magnetic properties in thinner films indicates stronger disorder of magnetic moments, which is considered to be the reason for this decrease of the localization length. Nature Publishing Group 2016-03-01 /pmc/articles/PMC4772131/ /pubmed/26928070 http://dx.doi.org/10.1038/srep22382 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Feng, Yaqing
Jin, Kui-juan
Gu, Lin
He, Xu
Ge, Chen
Zhang, Qing-hua
He, Min
Guo, Qin-lin
Wan, Qian
He, Meng
Lu, Hui-bin
Yang, Guozhen
Insulating phase at low temperature in ultrathin La(0.8)Sr(0.2)MnO(3) films
title Insulating phase at low temperature in ultrathin La(0.8)Sr(0.2)MnO(3) films
title_full Insulating phase at low temperature in ultrathin La(0.8)Sr(0.2)MnO(3) films
title_fullStr Insulating phase at low temperature in ultrathin La(0.8)Sr(0.2)MnO(3) films
title_full_unstemmed Insulating phase at low temperature in ultrathin La(0.8)Sr(0.2)MnO(3) films
title_short Insulating phase at low temperature in ultrathin La(0.8)Sr(0.2)MnO(3) films
title_sort insulating phase at low temperature in ultrathin la(0.8)sr(0.2)mno(3) films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4772131/
https://www.ncbi.nlm.nih.gov/pubmed/26928070
http://dx.doi.org/10.1038/srep22382
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