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The electronic, structural and magnetic properties of La(1−1/3)Sr(1/3)MnO(3) film with oxygen vacancy: a first principles investigation

We have systematically investigated the influence of oxygen vacancy defects on the structural, electronic and magnetic properties of La(1−x)Sr(x)MnO(3) (x = 1/3) film by means of ab initio calculations using bare GGA as well as GGA+U formalism, in the latter of which, the on-site Coulombic repulsion...

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Detalles Bibliográficos
Autor principal: Li, Jia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4772481/
https://www.ncbi.nlm.nih.gov/pubmed/26927290
http://dx.doi.org/10.1038/srep22422
Descripción
Sumario:We have systematically investigated the influence of oxygen vacancy defects on the structural, electronic and magnetic properties of La(1−x)Sr(x)MnO(3) (x = 1/3) film by means of ab initio calculations using bare GGA as well as GGA+U formalism, in the latter of which, the on-site Coulombic repulsion parameter U for Mn 3d orbital has been determined by the linear response theory. It is revealed that the introduction of the vacancy defects causes prominent structural changes including the distortion of MnO(6) octahedra and local structural deformation surrounding the oxygen vacancy. The GGA+U formalism yields a significantly larger structural change than the bare GGA method, surprisingly in contrast with the general notion that the inclusion of Hubbard U parameter exerts little influence on structural properties. The distortion of MnO(6) octahedra leads to a corresponding variation in the hybridization between Mn 3d and O 2p, which gets strengthened if the Mn-O distance becomes smaller and vice versa. The magnetic moments of the Mn atoms located in three typical sites of the vacancy-containing supercell are all larger than those in the pristine system. We have characterized the O-vacancy defect as a hole-type defect that forms a negative charge center, attracting electrons.