Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL)...

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Detalles Bibliográficos
Autores principales: Wang, Peng, Chen, Qimiao, Wu, Xiaoyan, Cao, Chunfang, Wang, Shumin, Gong, Qian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4773316/
https://www.ncbi.nlm.nih.gov/pubmed/26932758
http://dx.doi.org/10.1186/s11671-016-1339-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4773316/
https://www.ncbi.nlm.nih.gov/pubmed/26932758
http://dx.doi.org/10.1186/s11671-016-1339-3

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