Cargando…
Magnetization Reversal by Out-of-plane Voltage in BiFeO(3)-based Multiferroic Heterostructures
Voltage controlled 180° magnetization reversal has been achieved in BiFeO3-based multiferroic heterostructures, which is promising for the future development of low-power spintronic devices. However, all existing reports involve the use of an in-plane voltage that is unfavorable for practical device...
Autores principales: | Wang, J. J., Hu, J.M., Peng, Ren-Ci, Gao, Y., Shen, Y., Chen, L. Q., Nan, C. W. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4773698/ https://www.ncbi.nlm.nih.gov/pubmed/25995062 http://dx.doi.org/10.1038/srep10459 |
Ejemplares similares
-
Corrigendum: Magnetization Reversal by Out-of-plane Voltage in BiFeO(3)-based Multiferroic Heterostructures
por: Wang, J. J., et al.
Publicado: (2016) -
Effect of strain on voltage-controlled magnetism in BiFeO(3)-based heterostructures
por: Wang, J. J., et al.
Publicado: (2014) -
Single-domain multiferroic BiFeO(3) films
por: Kuo, C.-Y., et al.
Publicado: (2016) -
Deterministic and robust room-temperature exchange coupling in monodomain multiferroic BiFeO(3) heterostructures
por: Saenrang, W., et al.
Publicado: (2017) -
Control of Multiferroic properties in BiFeO(3) nanoparticles
por: Carranza-Celis, Diego, et al.
Publicado: (2019)