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Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors
The onset of inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET) takes place when the surface potential is approximately twice the bulk potential. In contrast, the conduction threshold in accumulation mode transistors, such as the oxide thin film transistor (TFT), has remaine...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4773861/ https://www.ncbi.nlm.nih.gov/pubmed/26932790 http://dx.doi.org/10.1038/srep22567 |