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Titanium trisulfide (TiS(3)): a 2D semiconductor with quasi-1D optical and electronic properties

We present characterizations of few-layer titanium trisulfide (TiS(3)) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratio...

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Autores principales: Island, Joshua O., Biele, Robert, Barawi, Mariam, Clamagirand, José M., Ares, José R., Sánchez, Carlos, van der Zant, Herre S. J., Ferrer, Isabel J., D’Agosta, Roberto, Castellanos-Gomez, Andres
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4773990/
https://www.ncbi.nlm.nih.gov/pubmed/26931161
http://dx.doi.org/10.1038/srep22214
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author Island, Joshua O.
Biele, Robert
Barawi, Mariam
Clamagirand, José M.
Ares, José R.
Sánchez, Carlos
van der Zant, Herre S. J.
Ferrer, Isabel J.
D’Agosta, Roberto
Castellanos-Gomez, Andres
author_facet Island, Joshua O.
Biele, Robert
Barawi, Mariam
Clamagirand, José M.
Ares, José R.
Sánchez, Carlos
van der Zant, Herre S. J.
Ferrer, Isabel J.
D’Agosta, Roberto
Castellanos-Gomez, Andres
author_sort Island, Joshua O.
collection PubMed
description We present characterizations of few-layer titanium trisulfide (TiS(3)) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS(3) nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS(3) flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS(3) in the random-phase-approximation (RPA) and find that the calculations are in qualitative agreement with the observed experimental optical transmittance.
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spelling pubmed-47739902016-03-09 Titanium trisulfide (TiS(3)): a 2D semiconductor with quasi-1D optical and electronic properties Island, Joshua O. Biele, Robert Barawi, Mariam Clamagirand, José M. Ares, José R. Sánchez, Carlos van der Zant, Herre S. J. Ferrer, Isabel J. D’Agosta, Roberto Castellanos-Gomez, Andres Sci Rep Article We present characterizations of few-layer titanium trisulfide (TiS(3)) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS(3) nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS(3) flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS(3) in the random-phase-approximation (RPA) and find that the calculations are in qualitative agreement with the observed experimental optical transmittance. Nature Publishing Group 2016-03-02 /pmc/articles/PMC4773990/ /pubmed/26931161 http://dx.doi.org/10.1038/srep22214 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Island, Joshua O.
Biele, Robert
Barawi, Mariam
Clamagirand, José M.
Ares, José R.
Sánchez, Carlos
van der Zant, Herre S. J.
Ferrer, Isabel J.
D’Agosta, Roberto
Castellanos-Gomez, Andres
Titanium trisulfide (TiS(3)): a 2D semiconductor with quasi-1D optical and electronic properties
title Titanium trisulfide (TiS(3)): a 2D semiconductor with quasi-1D optical and electronic properties
title_full Titanium trisulfide (TiS(3)): a 2D semiconductor with quasi-1D optical and electronic properties
title_fullStr Titanium trisulfide (TiS(3)): a 2D semiconductor with quasi-1D optical and electronic properties
title_full_unstemmed Titanium trisulfide (TiS(3)): a 2D semiconductor with quasi-1D optical and electronic properties
title_short Titanium trisulfide (TiS(3)): a 2D semiconductor with quasi-1D optical and electronic properties
title_sort titanium trisulfide (tis(3)): a 2d semiconductor with quasi-1d optical and electronic properties
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4773990/
https://www.ncbi.nlm.nih.gov/pubmed/26931161
http://dx.doi.org/10.1038/srep22214
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