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Weak antilocalization in Cd(3)As(2) thin films

Recently, it has been theoretically predicted that Cd(3)As(2) is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresi...

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Detalles Bibliográficos
Autores principales: Zhao, Bo, Cheng, Peihong, Pan, Haiyang, Zhang, Shuai, Wang, Baigeng, Wang, Guanghou, Xiu, Faxian, Song, Fengqi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4776113/
https://www.ncbi.nlm.nih.gov/pubmed/26935029
http://dx.doi.org/10.1038/srep22377
Descripción
Sumario:Recently, it has been theoretically predicted that Cd(3)As(2) is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50 nm-thick Cd(3)As(2) film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film.